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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
*Notes:
1. V GS = 0V
0.5
*Notes:
1. V GS = 10V
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
2. I D = 1mA
-50 0 50 100 150
o
0.0
-100
2. I D = 18A
-50 0 50 100
o
150
Figure 9. Maximum Safe Operating Area
500
Figure 10. Maximum Drain Current
vs. Case Temperature
40
100
10 μ s
100 μ s
30
10
1ms
1. T C = 25 C
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
10ms
DC
20
10
2. T J = 150 C
o
T C , Case Temperature [ C ]
0.01
1
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
1
0.5
0.1
0.2
0.1
0.05
P DM
1. Z θ JC (t) = 0.40 C/W Max.
0.01
0.02
0.01
Single pulse
t 1
t 2
*Notes:
o
2. Duty Factor, D= t 1 /t 2
10
10
10
10
10
10
10
10
0.005
-5
-4
-3
-2
-1
3. T JM - T C = P DM * Z θ JC (t)
0 1
2
Rectangular Pulse Duration [sec]
t 1 , Rectangular Pulse Duration [sec]
?2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. C1
4
www.fairchildsemi.com
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